Published Paper


Design of F in FET based High gain Low Power Two Stage OTA for Biomedical Applications

Sarangam Kunamalla, and Bheema Rao Nistala
India
Page: 260-272
Published on: 2023 June

Abstract

FinFET transistors are the most suitable alternatives to conventional bulk transistors in sub 45 nm CMOS technology because of its improved behavior of short channel and sub threshold which are associated with low leakage current. In this paper, a two stage operational transconductance amplifier (OTA) is designed and implemented using FinFET devices employing composite cascode technique. In both input differential stage and output stage this technique has been used in biasing to make it operate in sub-threshold region to minimize the power dissipation and improve the gain of OTA. Moreover, frequency response and stability are achieved with indirect frequency compensation. The designed circuit is verified using cadence spectre in 18 nm FinFET technology. It requires 0.8V DC to provide an open loop gain of 100.43 dB, fT of 11.28 MHz with a 128 nW power consumption. The proposed circuit improved 36.25% gain, 82% UGB, 33% power efficient, and exhibits high figure of merit compared to conventional two stage OTA under same platform.

 

PDF