In this work, we applied the SCAPS-1D simulation tool to optimize and explore the potential of Cu-based materialsas hole transport layer (HTL) including copper sulfide (CuS), copper oxide (Cu₂O), and copper thiocyanate (CuSCN)in CIGS solar cell. The effects of changing the bandgap, thickness, acceptor density, and operating temperatureon the power conversion efficiency (PCE) of CIGS solar cells with these HTLswere examined. Our results showed that the solar cell's efficiency is significantly impacted by the bandgap of the HTL, with Cu₂O achieving the highest PCE of 39.83% at an optimal bandgap of 2.2 eV. Moreover, the study also demonstrated that variations in thickness had minimal impact on efficiency, highlighting the effective charge transport capabilities of these materials. The acceptor density variation showed that efficiency remains constant at lower densities but increases significantly beyond a certain threshold due to enhanced charge carrier collection. On the other hand, the PCE was decreased with temperature incrementas a result of decreasing open-circuit voltage and increasing recombination. Among the studied Cu-based HTLs, Cu₂O emerged as the most promising candidate, offering superior performance and stability. This study suggests that these materials, which are readily available, inexpensive, and non-toxic, hold great potential as HTLs and can be integrated into advanced solar cell fabrication to achieve further efficiency improvements.